Gallium Nitride Research and Development (GRAND)

In this project, we specifically aim to create enhancement (e) -mode GaN devices suitable for applications in power switching and power amplifiers (PA). Develop a reliable technology for fabrication of e-mode GaN Fin MIS-HEMTs with high current drive.Develop compact models for enabling GaN based circuit-system designs.Design test structures for extraction of the model parameters.Characterize the devices for static, small signal RF, noise and switching performance.;Design, fabrication and characterization of passive components required for the power amplifier circuit.Design RF power amplifier MMICs using e-mode MIS-HEMTs. The MIS-HEMT devices should be specifically designed to suit the requirements for the circuit.Design 650 V e-mode Fin MIS-HEMTs for power switching in converter applications.PA MMIC fabrication and characterization.;;;;